| PART |
Description |
Maker |
| K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7P401823B |
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
| KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
| K7N403601M |
(K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
Samsung semiconductor
|
| CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100
4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1351 7C1351 CY7C1351-66AC 7C1351-40 7C1351-50 |
128Kx36 Flow-Through SRAM with NoBL TM Architecture
From old datasheet system
128Kx36 Flow-Through SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|
| KM736V789 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水线脉冲静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1350B-133AI CY7C1350B-133AC CY7C1350B-166AC |
128Kx36 Pipelined SRAM with NoBL Architecture 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
